| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory which can perform appropriate setting operation and forming operation. <P>SOLUTION: A control circuit applies, as a first voltage, a voltage that gradually increases or decreases from a first initial voltage to a selected first wiring, and applies, as a second voltage, a voltage that varies like a pulse to a selected second wiring. The second voltage includes a voltage pulse which rises from a second initial voltage at which a memory cell is in a non-selected state to a voltage at which the memory cell is in a selected state, provides a cell current to the memory cell by keeping that voltage, and falls to the second initial voltage when the cell current which increases in a process of increase of a cell voltage associated with a variation of the first voltage has reached a predetermined compliance current. <P>COPYRIGHT: (C)2012,JPO&INPIT |
