| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR GROWING GRAPHENE |
| 摘要 |
A catalyst film (2) is formed above a substrate (1). A graphene (3) is grown on the catalyst film (2). A gap for exposing the lower surface of the catalyst film (2) is formed. The catalyst film (2) is removed through the gap. |
| 申请公布号 |
WO2012017533(A1) |
申请公布日期 |
2012.02.09 |
| 申请号 |
WO2010JP63250 |
申请日期 |
2010.08.05 |
| 申请人 |
FUJITSU LIMITED;HAYASHI, KENJIRO;SATO, SHINTARO |
发明人 |
HAYASHI, KENJIRO;SATO, SHINTARO |
| 分类号 |
H01L29/786;H01L21/336;H01L51/05;H01L51/40 |
主分类号 |
H01L29/786 |
| 代理机构 |
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代理人 |
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| 主权项 |
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