发明名称 |
Substrate processing method |
摘要 |
A substrate processing method that forms an opening, which has a size that fills the need for downsizing a semiconductor device and is to be transferred to an amorphous carbon film, in a photoresist film of a substrate to be processed. Deposit is accumulated on a side wall surface of the opening in the photoresist film using plasma produced from a deposition gas having a gas attachment coefficient S of 0.1 to 1.0 so as to reduce the opening width of the opening. |
申请公布号 |
US8105949(B2) |
申请公布日期 |
2012.01.31 |
申请号 |
US20090493667 |
申请日期 |
2009.06.29 |
申请人 |
HONDA MASANOBU;ICHIKAWA HIRONOBU;TOKYO ELECTRON LIMITED |
发明人 |
HONDA MASANOBU;ICHIKAWA HIRONOBU |
分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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