| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide precise processing allowing precise transfer of a finer pattern using a thinner resist pattern in processing a silicon-based material containing a transition metal and particularly being applied in manufacturing a photo mask where an optical function film formed in a photo mask blank is processed. <P>SOLUTION: A transfer method of a resist pattern comprises a step of forming the resist pattern on a film including a silicon-based material containing a transition metal formed on a substrate; a step of oxidizing a part of a surface layer on which the resist pattern of the above film is not formed, in order to increase an oxygen-containing ratio in surface layer material composition; a step of detaching the resist pattern under non-oxidization conditions after the above oxidization step; and a step of etching, by chlorine-based dry etching containing oxygen, a part not oxidized in the above oxidization step due to the resist pattern formed with the oxidized surface layer as an etching mask, after the above resist pattern detachment step. <P>COPYRIGHT: (C)2012,JPO&INPIT |
