| 摘要 |
The system (1) has a p-doped conducting semi-conductor layer (9) comprising a boundary layer (11). An n-doped semi-conductor layer (8) is attached on the p-doped conducting semi-conductor layer. The p-doped conducting semi-conductor layer is attached on a wall of a roof surface (2) in a direct manner. The p-doped layer and the n-doped layer made of materials are respectively attached with conductor elements (5) i.e. chips, where the materials are designed as flowable, filling and coating materials. The layers are designed as electric conductive color masses. |
