发明名称 CMOS variable gain amplifier
摘要 A complementary metal-oxide semiconductor (CMOS) variable gain amplifier includes: a cascode amplifier including a common source field effect transistor and a common gate field effect transistor in a cascode structure; a first current generation unit connected in parallel to a drain of the common gate field effect transistor and configured to vary transconductance of the cascode amplifier; a second current generation unit connected to a common source of the cascode amplifier and configured to control a bias current of the cascode amplifier; a current control unit configured to generate a current control signal for the first and second current generation units; and a load stage connected in series to a drain of the cascode amplifier and configured to output an output current, which is varied by the overall transconductance of the cascode amplifier, as a differential output voltage.
申请公布号 US8102209(B2) 申请公布日期 2012.01.24
申请号 US20100878307 申请日期 2010.09.09
申请人 JANG SEUNGHYUN;LEE KWANG-CHUN;ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 JANG SEUNGHYUN;LEE KWANG-CHUN
分类号 H03F3/45 主分类号 H03F3/45
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