发明名称 |
CMOS variable gain amplifier |
摘要 |
A complementary metal-oxide semiconductor (CMOS) variable gain amplifier includes: a cascode amplifier including a common source field effect transistor and a common gate field effect transistor in a cascode structure; a first current generation unit connected in parallel to a drain of the common gate field effect transistor and configured to vary transconductance of the cascode amplifier; a second current generation unit connected to a common source of the cascode amplifier and configured to control a bias current of the cascode amplifier; a current control unit configured to generate a current control signal for the first and second current generation units; and a load stage connected in series to a drain of the cascode amplifier and configured to output an output current, which is varied by the overall transconductance of the cascode amplifier, as a differential output voltage. |
申请公布号 |
US8102209(B2) |
申请公布日期 |
2012.01.24 |
申请号 |
US20100878307 |
申请日期 |
2010.09.09 |
申请人 |
JANG SEUNGHYUN;LEE KWANG-CHUN;ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
JANG SEUNGHYUN;LEE KWANG-CHUN |
分类号 |
H03F3/45 |
主分类号 |
H03F3/45 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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