发明名称 Programmable soft lithography: solvent-assisted nanoscle embossing
摘要 A method of forming a nanoscale pattern on a substrate is provided, wherein the method increases or decreases the spacing of patterns on the substrate relative to a master, while keeping the pattern feature size constant. The method can alternatively reduce the pattern feature size of the substrate relative to a master, while keeping the spacing patterns constant.
申请公布号 US2012013039(A1) 申请公布日期 2012.01.19
申请号 US201113135910 申请日期 2011.07.18
申请人 ODOM TERI W.;LEE MIN HYUNG;HUNTINGTON MARK D.;ZHOU WEI;NORTHWESTERN UNIVERSITY 发明人 ODOM TERI W.;LEE MIN HYUNG;HUNTINGTON MARK D.;ZHOU WEI
分类号 B29C33/40 主分类号 B29C33/40
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