| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a III-nitride semiconductor laser element having high resistance against catastrophic optical damage (COD). <P>SOLUTION: The III-nitride semiconductor laser element 11 has a laser waveguide extending in a direction of a cross line of an m-n plane with a semipolar plane 17a. On both ends of the laser waveguide, first and second end faces 26, 28 serving as laser resonators are provided. The first and second end faces 26, 28 intersect the m-n plane (or a-n plane). A c+ axis vector forms an acute angle with a waveguide vector WV. The waveguide vector WV corresponds to a direction from the second end face 28 to the first end face 26. A thickness of a first dielectric multilayer film 43a on the first end face (C+ side) 26 is thinner than a thickness of a second dielectric multilayer film 43b on the second end face (C- side) 28. <P>COPYRIGHT: (C)2012,JPO&INPIT |
