发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
摘要 <p>PURPOSE: A semiconductor device and a formation method thereof are provided to easily connect a storage electrode contact plug to an active region in the semiconductor device which includes a buried gate, thereby improving characteristics of the semiconductor device. CONSTITUTION: A semiconductor substrate(150) comprises a cell region(i) and a peripheral circuit region(ii). The semiconductor substrate comprises an active region(154) which is defined as a device separation film(152). An epitaxial silicon layer(164) is grown in the upper part of the active region. A bit line contact plug(172) is connected to the epitaxial silicon layer. A storage electrode contact plug(180) is connected to the epitaxial silicon layer.</p>
申请公布号 KR20120003742(A) 申请公布日期 2012.01.11
申请号 KR20100064507 申请日期 2010.07.05
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HWANG, EUNG RIM;LIM, JI MIN;HWANG, KYUNG HO
分类号 H01L21/8242;H01L21/335;H01L27/108;H01L29/78 主分类号 H01L21/8242
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