发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME |
摘要 |
<p>PURPOSE: A semiconductor device and a formation method thereof are provided to easily connect a storage electrode contact plug to an active region in the semiconductor device which includes a buried gate, thereby improving characteristics of the semiconductor device. CONSTITUTION: A semiconductor substrate(150) comprises a cell region(i) and a peripheral circuit region(ii). The semiconductor substrate comprises an active region(154) which is defined as a device separation film(152). An epitaxial silicon layer(164) is grown in the upper part of the active region. A bit line contact plug(172) is connected to the epitaxial silicon layer. A storage electrode contact plug(180) is connected to the epitaxial silicon layer.</p> |
申请公布号 |
KR20120003742(A) |
申请公布日期 |
2012.01.11 |
申请号 |
KR20100064507 |
申请日期 |
2010.07.05 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
HWANG, EUNG RIM;LIM, JI MIN;HWANG, KYUNG HO |
分类号 |
H01L21/8242;H01L21/335;H01L27/108;H01L29/78 |
主分类号 |
H01L21/8242 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|