PHOTORECEPTOR ELEMENT AND METHOD FOR PRODUCING SAME

摘要

Provided is a photoreceptor element with which fluctuations in photoreception sensitivity are controlled over the near infrared region from the short wavelength side including a wavelength of 1.3 µm to the long wavelength side, and also provided is a method for producing the photoreceptor element. The photoreceptor element comprises a type-II multiquantum-well photoreception layer formed by repeatedly forming GaAsSb and InGaAs layers on an InP substrate, and has photoreception sensitivity in the near infrared region that includes wavelengths of 1.3 µm and 2.0 µm. The ratio of photoreception sensitivity at a wavelength of 1.3 µm and the photoreception sensitivity at a wavelength of 2.0 µm is 0.5 to 1.6.