METHOD FOR MANUFACTURING A NANOPOROUS ULTRA-LOW DIELECTRIC THIN FILM INCLUDING A HIGH-TEMPERATURE OZONE TREATMENT AND NANOPOROUS ULTRA-LOW DIELECTRIC THIN FILM MANUFACTURED BY THE METHOD
摘要
Provided are a method for manufacturing a nanoporous ultra-low dielectric thin film including a high-temperature ozone treatment, and a nanoporous ultra-low dielectric thin film manufactured by the method. The method comprises: preparing a solution mixture by mixing a solution containing organic silicate matrix and a solution containing reactive porogen; forming a thin film by coating a substrate with the solution mixture; and performing thermal treatment on the thin film, and performing ozone treatment during the thermal treatment. A nanoporous ultra-low dielectric thin film manufactured by the method can have a permittivity of 2.3 or less and a mechanical strength of 10 GPa or more by improving size and distribution of pores in the thin film by virtue of high-temperature ozone treatment and optimized treatment temperature.
申请公布号
WO2011099768(A3)
申请公布日期
2012.01.05
申请号
WO2011KR00865
申请日期
2011.02.09
申请人
INDUSTRY-UNIVERSITY COOPERATION FOUNDATION SOGANGUNIVERSITY;RHEE, HEE WOO;SHIN, BO RA;CHOI, KYU YOON;KIM, BUM SUK
发明人
RHEE, HEE WOO;SHIN, BO RA;CHOI, KYU YOON;KIM, BUM SUK