发明名称 LIGHT EMITTING DEVICE AND SEMICONDUCTOR WAFER
摘要 PURPOSE: A light emitting device and a semiconductor wafer are provided to implement a desired chip size and shape by exposing a substrate, a light transmission layer, a resin layer, and an overcoat electrode to outside. CONSTITUTION: In a light emitting device and a semiconductor wafer, a bonding layer(24) is formed on a substrate(10). A plurality of convex parts(40) comprises a first conductive layer, a light-emitting layer, and a second conductive layer A plurality of convex parts is formed on the bonding layer. A first electrode(52) is installed on the second conductive layer. A light transmission resin layer is formed around the convex part. A first overcoat electrode(54) has the first electrodes which are connected to each other. The first overcoat electrode is installed in the light transmission resin layer.
申请公布号 KR20110140074(A) 申请公布日期 2011.12.30
申请号 KR20110022835 申请日期 2011.03.15
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 FURUKAWA CHISATO
分类号 H01L33/36;H01L33/44 主分类号 H01L33/36
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