发明名称 LIGHT EMITTING DEVICE AND SEMICONDUCTOR WAFER
摘要 According to one embodiment, a light emitting device includes a substrate, a bonding layer, a plurality of protrusions, a first electrode, a translucent resin layer, and a first overcoat electrode. The bonding layer is provided on the substrate. The plurality of protrusions is provided on the bonding layer and includes a first conductivity type layer, a light emitting layer provided on the first conductivity type layer, and a second conductivity type layer provided on the light emitting layer. The first electrode is provided on the second conductivity type layer. The translucent resin layer is provided around the protrusions. The first overcoat electrode is provided on the translucent resin layer and connects the first electrodes respectively provided on the plurality of protrusions. The substrate, the translucent resin layer, and the first overcoat electrode each are exposed at a side surface of the light emitting device.
申请公布号 US2011316036(A1) 申请公布日期 2011.12.29
申请号 US201113052294 申请日期 2011.03.21
申请人 FURUKAWA CHISATO;KABUSHIKI KAISHA TOSHIBA 发明人 FURUKAWA CHISATO
分类号 H01L33/36 主分类号 H01L33/36
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