发明名称 |
Power devices with super junctions and associated methods manufacturing |
摘要 |
Power devices with super junctions and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a power device includes forming an epitaxial layer on a substrate material and forming a trench in the epitaxial layer. The trench has a first sidewall, a second sidewall, and a bottom between the first and second sidewalls. The method also includes forming an insulation material on at least one of the first and second sidewalls of the trench and diffusing a dopant into the epitaxial layer via at least one of the first and second sidewalls of the trench via the insulation material. |
申请公布号 |
US8084811(B2) |
申请公布日期 |
2011.12.27 |
申请号 |
US20090576150 |
申请日期 |
2009.10.08 |
申请人 |
DISNEY DONALD R.;HSING MICHAEL R.;MONOLITHIC POWER SYSTEMS, INC. |
发明人 |
DISNEY DONALD R.;HSING MICHAEL R. |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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