发明名称 VOLTAGE REGULATORS, MEMORY CIRCUITS, AND OPERATING METHODS THEREOF
摘要 A voltage regulator includes an output stage electrically coupled with an output end of the voltage regulator. The output stage includes at least one transistor having a bulk and a drain. At least one back-bias circuit is electrically coupled with the bulk of the at least one transistor. The at least one back-bias circuit is configured to provide a bulk voltage, such that the bulk and the drain of the at least one transistor are reverse biased during a standby mode of a memory array that is electrically coupled with the voltage regulator.
申请公布号 US2011310690(A1) 申请公布日期 2011.12.22
申请号 US20100820712 申请日期 2010.06.22
申请人 HUANG MING-CHIEH;CHERN CHAN-HONG;YANG TIEN CHUN;LIN CHIH-CHANG;SWEI YUWEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HUANG MING-CHIEH;CHERN CHAN-HONG;YANG TIEN CHUN;LIN CHIH-CHANG;SWEI YUWEN
分类号 G11C5/14 主分类号 G11C5/14
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