| 摘要 |
PURPOSE: A semiconductor light emitting device is provided to interpose a dielectric layer between a first electrode and a second semiconductor layer, thereby preventing damage of the semiconductor light emitting device. CONSTITUTION: A first semiconductor layer has first conductivity. A second semiconductor layer(113) has second conductivity different from the first conductivity. An active layer is interposed between the first semiconductor layer and the second semiconductor layer. A first electrode is included in the first semiconductor layer. A second electrode(132) is included in the second semiconductor layer. A dielectric layer(140) forms a capacitor with one of either the first electrode or the first semiconductor layer and one of either the second electrode or the second semiconductor layer. |
