| 摘要 |
A III-nitride based high electron mobility transistor is described that has a gate-connected grounded field plate. The gate-connected grounded field plate device can minimize the Miller capacitance effect. The transistor can be formed as a high voltage depletion mode transistor and can be used in combination with a low voltage enhancement-mode transistor to form an assembly that operates as a single high voltage enhancement mode transistor. |
