发明名称 |
METAL GATE STRUCTURES AND METHODS FOR FORMING THEREOF |
摘要 |
Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a second layer comprising cobalt or nickel within the feature atop the first layer; and depositing a third layer comprising a metal within the feature atop the second layer to fill the feature, wherein at least one of the first or second layers forms a wetting layer to form a nucleation layer for a subsequently deposited layer, wherein one of the first, second, or third layers forms a work function layer, and wherein the third layer forms a gate electrode.
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申请公布号 |
US2011298062(A1) |
申请公布日期 |
2011.12.08 |
申请号 |
US201113116794 |
申请日期 |
2011.05.26 |
申请人 |
GANGULI SESHADRI;YU SANG HO;LEE SANG-HYEOB;HA HYOUNG-CHAN;LEE WEI TI;KIM HOON;GANDIKOTA SRINIVAS;LEI YU;MORAES KEVIN;TANG XIANMIN;APPLIED MATERIALS, INC. |
发明人 |
GANGULI SESHADRI;YU SANG HO;LEE SANG-HYEOB;HA HYOUNG-CHAN;LEE WEI TI;KIM HOON;GANDIKOTA SRINIVAS;LEI YU;MORAES KEVIN;TANG XIANMIN |
分类号 |
H01L21/28;B82Y40/00;B82Y99/00;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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