| 摘要 |
<P>PROBLEM TO BE SOLVED: To control a threshold voltage of first and second MIS transistors to a desired threshold voltage, in a semiconductor device having the first and second MIS transistors with gate widths different from each other. <P>SOLUTION: A semiconductor device has first and second MIS transistors. The first MIS transistor has a first gate insulating film 15A having a first high dielectric constant insulating film 15a, and a first gate electrode 20A. The second MIS transistor has a second gate insulating film 15B having a second high dielectric constant insulating film 15b, and a second gate electrode 20B. The first and second gate insulating films include an adjustment metal. A first gate width W1 of the first MIS transistor is smaller than a second gate width W2 of the second MIS transistor. An average adjustment metal concentration of the adjustment metal in the first gate insulating film is lower than that of the adjustment metal in the second gate insulating film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
