BIPOLAR TRANSISTOR AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A bipolar transistor and a manufacturing method thereof are provided to reduce leakage current of the bipolar transistor by completely covering an insulating layer corresponding to an emitter base junction area using base metal. CONSTITUTION: A base area(120) is formed within a collector domain(110). An emitter area(130) is formed within the base area. An insulating layer(140) is formed in the surface of the emitter area and base area. A base metal(150) is connected to the base area through a base contact domain. An emitter metal(160) is connected to the emitter area through an emitter contact domain. The base metal covers the insulating layer which copes with the base area and an emitter-base junction area while covering the insulating layer which copes with the emitter area.