| 摘要 |
The electronic device ( 100 ) comprises a semiconductor element ( 1 ) (e.g. a transistor), an encapsulation ( 5 ) and an electrically conductive layer ( 3 ) with a first and a second contact pad ( 11,12 ), used as signal pads, and a third contact pad ( 13 ) used as ground pads. Due to the shape of the contact pads ( 11,12,13 ), the spacing ( 200 ) is continuous, with a small entrance in between of the first and second contact pads ( 11,12 ). Consequently, the parasitic inductance is reduced and the device ( 100 ) is suitable for use at frequencies below and above 30 GHz, particularly up to 40 GHz. |
