发明名称 SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor laser having high reliability and suppressing breakage due to catastrophic optical degradation (COD), and a method for manufacturing the same. <P>SOLUTION: A semiconductor laser 100 comprises: a semiconductor substrate 101; and a resonator 102 formed on the semiconductor substrate and having a nitride semiconductor layer. A lower edge 102a of an edge face of the resonator comprises a notch region 101a so as not to come into contact with the semiconductor substrate. The notch region can make a strain applied to a region in the vicinity of the edge face of the resonator smaller than a strain applied to a region between regions in the vicinity of the edge face. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011228570(A) 申请公布日期 2011.11.10
申请号 JP20100098650 申请日期 2010.04.22
申请人 RENESAS ELECTRONICS CORP 发明人
分类号 H01S5/16;H01S5/343 主分类号 H01S5/16
代理机构 代理人
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