| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of processing while monitoring the state of deposits on an inner wall of a processing chamber, the inside of plasma, or the like in real time and managing at all times in order to manufacture a semiconductor device stably and efficiently. <P>SOLUTION: In order to grasp the state of an inner wall of a plasma processing chamber, the state inside plasma, or the like, a probe base 219 is arranged on the inner wall of the plasma processing chamber, a pulsed bias power is applied to this probe base 219, and a voltage change of a condenser 222 is analyzed. Thereby, the state of the inner wall of the processing chamber and the state inside the plasma are monitored in real time, and a plasma processing apparatus is controlled based on the resulting data value. Thereby, manufacturing a semiconductor device stably while performing efficient processing and managing the plasma in the processing chamber directly. <P>COPYRIGHT: (C)2012,JPO&INPIT |
