SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can arrange desired wiring without causing increase of a chip area even when being microfabricated finely.

SOLUTION: The semiconductor memory device includes an active area 12 and a plurality of first bit lines SABL formed in a semiconductor substrate. A first wiring BLCRL is extended along a direction which intersects the plurality of the first bit lines SABL to transmit a control potential applied to a second bit line(s) not selected among a plurality of the second bit lines BL connected to a plurality of memory cells formed on the semiconductor substrate. A second wiring 21 is electrically connected to the first wiring BLCRL and extended along the first bit lines SABL. A third wiring 23 is electrically connected to the second wiring 21 and extended in a direction which intersects the first bit lines SABL. The fourth wiring 34 electrically connects between the third wiring 23 and an impurity diffused layer in a portion equivalent to a node of the active area to which the control potential are applied.

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