发明名称 |
CADMIUM SULFIDE LAYERS FOR USE IN CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE |
摘要 |
Cadmium telluride thin film photovoltaic devices are generally provided. The device can include a substrate, a transparent conductive oxide layer on the substrate; a resistive transparent buffer layer on the transparent conductive oxide layer; a cadmium sulfide layer on the resistive transparent buffer layer; a cadmium telluride layer on the cadmium sulfide layer; and, a back contact layer on the cadmium telluride layer. The cadmium sulfide layer can include oxygen in a molar percentage greater than 0% to about 20%. In one particular embodiment, a second cadmium sulfide layer substantially free from oxygen can be positioned between the cadmium sulfide layer and the cadmium telluride layer. Methods of depositing a cadmium sulfide layer on a substrate and methods of manufacturing a cadmium telluride thin film photovoltaic device are also generally provided.
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申请公布号 |
US2011265868(A1) |
申请公布日期 |
2011.11.03 |
申请号 |
US20100770055 |
申请日期 |
2010.04.29 |
申请人 |
PRIMESTAR SOLAR, INC. |
发明人 |
DRAYTON JENNIFER ANN;PEABODY SCOTT DANIEL-FELDMAN;GOSSMAN ROBERT DWAYNE |
分类号 |
H01L31/0296;C23C14/34;H01L31/18 |
主分类号 |
H01L31/0296 |
代理机构 |
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