发明名称 |
PHASE CHANGE MEMORY ARRAY BLOCKS WITH ALTERNATE SELECTION |
摘要 |
<p>A phase change memory is disclosed. The phase change memory has a plurality of block units. The block units are alternately selected. The alternate block unit selection suppresses peak current ground bouncing on sub-wordline and connected ground line through sub-wordline driver transistor. An alternate bitline selection avoids adjacent cell heating interference in the selected block unit.</p> |
申请公布号 |
WO2011134079(A1) |
申请公布日期 |
2011.11.03 |
申请号 |
WO2011CA50136 |
申请日期 |
2011.03.10 |
申请人 |
MOSAID TECHNOLOGIES INCORPORATED;PYEON, HONG BEOM |
发明人 |
PYEON, HONG BEOM |
分类号 |
G11C13/00;G11C7/00;G11C7/12;G11C7/18 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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