| 摘要 |
The present invention relates to a plasma processing apparatus. The plasma processing apparatus (1) comprises: a reaction chamber (100); an upper electrode (200), which is arranged inside the reaction chamber (100) and receives power for generating plasma; a plurality of adjustment parts (400), which is connected to the upper electrode (200) for adjusting the shape of the upper electrode (200); and a lower electrode (300) arranged inside the reaction chamber (100), on which a substrate (10) is mounted and supported. Since an operator may adjust to any desired shape, the upper electrode (200) to which a high frequency wave is applied, the plasma processing apparatus (1) can generate plasma uniformly in each region inside the reaction chamber (100). |
