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发明名称
High performance 1T-DRAM cell device and manufacturing method thereof
摘要
<p>본 발명에 의하여 MOS 기반의 DRAM 셀 소자의 축소화 특성과 성능이 개선되고 메모리 용량이 증가하게 된다.</p>
申请公布号
KR101073643(B1)
申请公布日期
2011.10.14
申请号
KR20090013849
申请日期
2009.02.19
申请人
发明人
分类号
B82Y40/00;H01L21/336
主分类号
B82Y40/00
代理机构
代理人
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