| 摘要 |
Provided are a semiconductor device and a method for manufacturing the same. Since a plug is formed in a portion of a metal interconnection between a first metal contact and a second metal contact, an amount of a metal interconnection coupled to a second metal contact increases. Also, since the first metal contact is formed so that the upper width is narrower than the lower width by using insulation layers having a different etching selectivity when the first metal contact is formed, it is possible to substantially prevent copper ions of the meal interconnection from being migrated or separated according to the flow of a VPP electric field. Consequently, a contact-not-open phenomenon between the first metal contact and the second metal contact may be prevented.
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