发明名称 |
Solid-state imaging device |
摘要 |
A plurality of pixel portions (12) are formed on a silicon substrate (11). A photoelectric converter portion (10) constituting each of the pixel portions (12) is electrically isolated by an element isolation portion (13) comprising an insulating film formed on the silicon substrate (11). The photoelectric converter portion (10) partitioned by the element isolation portion (13) is so formed that a crystal orientation of the sides in contact with the element isolation portion (13) corresponds to a <00-1> direction. This makes it possible to reduce dark current caused by stress in the vicinity of the interface of the element isolation portion (13) and maintain high sensitivity even if the pixel portions (12) are made smaller in size.
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申请公布号 |
US8035178(B2) |
申请公布日期 |
2011.10.11 |
申请号 |
US20080377312 |
申请日期 |
2008.06.24 |
申请人 |
PANASONIC CORPORATION |
发明人 |
MORI MITSUYOSHI;SHIMADA YASUHIRO;KATAYAMA TAKUMA;TANIGUCHI KENJI;FURUHASHI MASAYUKI |
分类号 |
H01L27/142 |
主分类号 |
H01L27/142 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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