| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in voltage resistance, and to provide a method for manufacturing the semiconductor device.SOLUTION: The semiconductor device includes element regions AA extending in a bit-line BL direction, contact plugs CP each of which is arranged on a first portion of each element region AA and selection transistors ST, each of which is arranged on a second portion adjacent to the first portion of the element region AA in the bit-line BL direction, wherein the width of an upper surface area of the first portion in a word-line WL direction vertical to the bit-line BL direction is narrower than the width of an upper surface area of the second portion in the word-line WL direction. |
