| 摘要 |
<p>A memory cell with a charge trapping structure (130) is read by measuring current between the substrate region of the memory cell and one of the source region of the memory cell and the drain region of the memory cell. The read operation decreases the coupling between different parts of the charge trapping structure when other parts of the charge trapping structure store data that are not of interest. The sensing window (350) of the memory cell can be greatly improved by this read operation.</p> |
