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发明名称
NITRIDE BASED SEMICONDUCTOR DEVICE EMPLOYING RECESSED GATE EDGE STRUCTURE AND METHOD FOR FABRICATING THE SAME
摘要
申请公布号
KR20110105032(A)
申请公布日期
2011.09.26
申请号
KR20100024037
申请日期
2010.03.18
申请人
FAIRCHILD KOREA SEMICONDUCTOR LTD.
发明人
KIM, MIN KI;HAN, MIN KOO;CHOI, YOUNG HWAN;LIM, JI YONG
分类号
H01L29/768;H01L21/336;H01L33/02
主分类号
H01L29/768
代理机构
代理人
主权项
地址
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