| 摘要 |
PROBLEM TO BE SOLVED: To improve a breakdown voltage of an IGBT (IEGT) (Insulated Gate Bipolar Transistor) (Injection Enhanced Gate Transistor) structure, and to improve a diode characteristic in an inversely conducted structure. SOLUTION: A semiconductor device 100 includes a first semiconductor region as an N-type base layer 4, a second semiconductor region as a P-type base layer 5, a third semiconductor region as a P-type dummy layer 10, a fourth semiconductor region as an N-type source layer 6, a first control electrode as a gate electrode 9, a first primary electrode as an emitter electrode 8, a fifth semiconductor region as an N-type buffer layer 3, a sixth semiconductor region as a P-type collector layer 2, a second primary electrode as a collector electrode 1, and a P-type MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) 11 formed between the emitter electrode 8 and the P-type dummy layer 10. COPYRIGHT: (C)2011,JPO&INPIT
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