ION-BEAM GENERATING APPARATUS, AND SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING ELECTRONIC DEVICE USING SAME

摘要

Provided is an ion-beam generating apparatus, wherein uniform substrate processing is made possible by dispersing ion beams pulled out from a plasma chamber, and reducing deviation in the directions of ion beams entering a substrate. Ion beams pulled out linearly from a discharge cell (2) by a pull-out electrode (7) are dispersed into a plurality of directions by a dispersion electrode (30) formed at the front side of the pull-out electrode (7), and made to enter a substrate (W) in an inclined state through a plurality of opening sections (66) formed on the dispersion electrode (30).