| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a shield member and an apparatus for growing a single crystal equipped with the member, which can produce a high quality and long-sized single crystal by virtue of prominent effects in uniformizing surface temperatures of the seed crystal and the grown crystal in the radial direction, in the production of a silicon carbide single crystal, etc., by a sublimation recrystallization method. <P>SOLUTION: In the apparatus for growing a single crystal equipped with a container for growing the crystal; a raw material housing part positioned at the lower part in the container for growing the crystal; a substrate holding part arranged at the upper side of the raw material housing part and holding the substrate so as to oppose the raw material housing part; and a heater arranged at the outer circumference of the container for growing the crystal; and growing the single crystal of the raw material on the substrate by sublimating the raw material from the raw material housing part, the shield member 10 is arranged between the raw material housing part and the substrate holding part for use. The shield member 10 has a plurality of permeation gaps 16, 17, 18 and 19 through which the raw material gas permeates; where the shield member 10 is so constituted that the heat capacity becomes larger toward its end part from its center part. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
