SUBSTRATE WIRING METHOD AND SEMICONDUCTOR MANUFACTURING DEVICE

摘要

The disclosed substrate wiring method can embed copper all the way to the lowest parts of a wiring pattern formed on a substrate. Said method is used to wire a substrate inside a processing vessel (100) kept in a vacuum state, said substrate having a wiring pattern formed thereon. Said method is characterized by the inclusion of: a preprocess in which a desired cleaning gas is used to clean the wiring pattern on the wafer; and an embedding step, after the preprocess, in which a clustered metal gas (metal gas clusters (Cg)) is used to embed metal nanoparticles inside the wiring pattern.