发明名称 GAS BARRIER FILM, FILM DEPOSITION METHOD, AND FILM DEPOSITION DEVICE
摘要 A gas barrier film includes: a base film; and a silicon nitride layer deposited on a surface of the base film, wherein in a direction of a thickness of the silicon nitride layer, a first mean density of a region of the silicon nitride layer closer to the base film and having a 20% thickness of the silicon nitride layer is lower than a second mean density of a region opposite from the base film and having a 20% thickness of the silicon nitride layer, and a third mean density of a middle region having a 20% thickness of the silicon nitride layer lies between the first mean density and the second mean density.
申请公布号 US2011217533(A1) 申请公布日期 2011.09.08
申请号 US201113040853 申请日期 2011.03.04
申请人 FUJIFILM CORPORATION 发明人 NISHIDA HIROYUKI
分类号 B32B7/02;C23C16/34;C23C16/455;C23C16/50 主分类号 B32B7/02
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