发明名称 Two layer LTO temperature oxide backside seal for a wafer
摘要 A two layer LTO backside seal for a wafer. The two layer LTO backside seal includes a low stress LTO layer having a first major side and a second major side, the first major5 side of the low stress LTO layer adjacent to one major side of the wafer. The two layer LTO backside seal further includes a high stress LTO layer having a first major side and second major side, the first major side of the high stress LTO layer adjacent the second major side of the low stress LTO layer.
申请公布号 US8007914(B2) 申请公布日期 2011.08.30
申请号 US20030528765 申请日期 2003.09.18
申请人 SILTRONIC AG 发明人 LI JIN-XING;OW BOON-KOON
分类号 B32B9/04;B32B9/00;B32B13/04;B32B19/00;H01L21/22 主分类号 B32B9/04
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