| 摘要 |
PROBLEM TO BE SOLVED: To control a film quality according to the growth of the film in a plasma CVD film-forming method. SOLUTION: This film-forming method includes: arranging a substrate 4 in a space sandwiched between a first electrode 1 and a second electrode 2 which are positioned to face each other in the inside of a film-forming chamber 3 when forming a thin film; outputting a bias voltage having a DC component or an AC component with a frequency lower than that of the high-frequency power, by a variable-voltage bias power source 7 connected to the first electrode or the second electrode and applying the voltage between the first electrode and the second electrode, while exciting plasma with a high-frequency power source 6 connected to at least either of the first electrode or the second electrode. At this time, the bias voltage of the bias power source is controlled to vary between at least two voltage values. COPYRIGHT: (C)2011,JPO&INPIT
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