ORGANIC THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME

摘要

PURPOSE: An organic thin film transistor and a forming method thereof are provided to improve an electric property by forming a source electrode, a drain electrode, and an organic semiconductor layer with a self-alignment method. CONSTITUTION: A gate electrode(110) is formed on a substrate(100). A gate insulation layer(120) is formed on the substrate to cover the gate electrode. A recess region is formed on the upper side of the gate insulation layer. A source electrode(130S) and a drain electrode(130D) are formed in the recess region. An organic semiconductor layer(140) is formed between the source electrode and the drain electrode.