| 摘要 |
<p>In the provided method, a mask layer is formed via the following steps: a step in which a first photoresist layer is formed, exposed, and developed on a substrate, thereby forming a first photoresist pattern; a step in which the first photoresist pattern is made insoluble; a step in which a second photoresist layer is formed, exposed, and developed on top of the first photoresist pattern, thereby forming a second photoresist pattern that intersects the first photoresist pattern; a step in which the second photoresist pattern is made insoluble; and a step in which a third photoresist layer is formed, exposed, and developed on top of the first and second photoresist patterns, thereby forming a third photoresist pattern.</p> |
