发明名称 |
Method to fabricate small dimension devices for magnetic recording applications |
摘要 |
A three step ion beam etch (IBE) sequence involving low energy (<300 eV) is disclosed for trimming a sensor critical dimension (free layer width=FLW) to less than 50 nm. A first IBE step has a steep incident angle with respect to the sensor sidewall and accounts for 60% to 90% of the FLW reduction. The second IBE step has a shallow incident angle and a sweeping motion to remove residue from the first IBE step and further trim the sidewall. The third IBE step has a steep incident angle to remove damaged sidewall portions from the second step and accounts for 10% to 40% of the FLW reduction. As a result, FLW approaching 30 nm is realized while maintaining high MR ratio of over 60% and low RA of 1.2 ohm-μm2. Sidewall angle is manipulated by changing one or more ion beam incident angles.
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申请公布号 |
US2011198314(A1) |
申请公布日期 |
2011.08.18 |
申请号 |
US20100658662 |
申请日期 |
2010.02.12 |
申请人 |
HEADWAY TECHNOLOGIES, INC. |
发明人 |
WANG HUI-CHUAN;ZHAO TONG;ZHENG MIN;YU MINGHUI;LI MIN;HAN CHERNG CHYI |
分类号 |
B44C1/22 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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地址 |
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