| 摘要 |
<p>PURPOSE: A method for forming the fine pattern of a semiconductor device is provided to form a fine pattern without using double exposure technology by forming a contact hole using an obtained fine pattern. CONSTITUTION: A photosensitive pattern(12,12a,12b) with a fixed level on a semiconductor board(10) is formed. A hard mask layer is formed on the semiconductor board which includes the photosensitive pattern. A hard mask layer(14) is etched back until the photosensitive pattern is exposed. A mask pattern with smaller size than a fixed size is formed by eliminating one part of an exposed photosensitive pattern. A thermal process is performed for 60 minutes at 120 to 170 degrees. Etching difference is generated in the edge and center part of the photosensitive pattern.</p> |
