| 摘要 |
Provided are a light emitting diode, (100,102,103) a light emitting diode package (200), and a lighting system (1100,1200). The light emitting diode includes a light emitting structure (120) including a first conductive type semiconductor layer (122), a second conductive type semiconductor layer (126), and an active layer (124) between the first conductive type semiconductor layer and the second conductive type semiconductor layer and a light extraction pattern (P) in which a period (a) exceeds »/n (where, », is a wavelength of light emitted from the active layer, and n is a refractive index of the light emitting structure) on the light emitting structure. The period (a) may be in the range of 5×(»/n) < a < 15×(»/n). An etching depth (h) of the light extraction pattern (P) may be equal to or greater than »/n. |
