| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a bonded structure in which a Bi-based intermetallic compound is contained and dispersed in a junction between a semiconductor element and an electrode. <P>SOLUTION: A solder ball 200 of a Bi ball with a diameter D applied with an Ni coating with a thickness L is placed on the heated electrode 103, values D and L of the solder ball 200 have a relation of 0.022≤L/D≤0.039, the semiconductor element 102 is placed on the junction 104 after the solder ball 200 wets and spreads on the electrode 103 to form the junction 104, and the bonded structure 107 bonded to the electrode 103 prevents the junction 104 from being melted due to heating of the semiconductor element 102. <P>COPYRIGHT: (C)2011,JPO&INPIT |
