| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To further suppress the film-peeling of a functional layer formed on the surface of a workpiece such as a semiconductor wafer. <P>SOLUTION: In a first working groove formation step, a first laser beam is radiated to a functional layer 13 along a division scheduled line 12 of a semiconductor wafer 1 to form a pair of first working grooves 141 and 142 along the division scheduled line 12 with an interval wider than the width of a cutting blade that is used for a cutting step at a later stage. In a protruding part formation step, a second laser beam is radiated to the functional layer 13 inside the pair of first working grooves 141 and 142 along the division scheduled line 12 to form a second working groove 15 of such a depth as the surface of a substrate 10 is so exposed as to be separated from the pair of first working grooves 141 and 142, and thus a pair of protruding parts 161 and 162 are formed. Then, in a cutting step, the semiconductor wafer 1 is cut using the cutting blade along the division scheduled line 12 where the second working groove 15 has been formed. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
