| 摘要 |
<p>PURPOSE: A manufacturing method of a semiconductor device is provided to adjust a critical dimension(CD) of each photosensitive film by a post-processing operation using one exposure process and two photolithography processes, thereby enabling in reduction in the cost of the semiconductor device and modifying turn around time(TAT). CONSTITUTION: A manufacturing method of a semiconductor device is comprised of the following procedures. A photosensitive film is formed on a semiconductor substrate. A first hole is formed by performing a first photolithography process after an exposure process of the photosensitive film. A critical dimension(CD) of the first hole is revised using a post-processing process. A second hole is formed on the front surface of the photosensitive film including the first hole using a second photolithography process.</p> |
