发明名称 VERFAHREN ZUR BILDUNG EINER LEITFÄHIGEN BESCHICHTUNG AUF EINEM HALBLEITERBAUELEMENT
摘要 On a semiconductor die, a conductive layer is formed by first attaching a semiconductor wafer to a support wafer, then cutting the semiconductor wafer into dies, and finally depositing a conductive layer on the sides of the dies. The conductive layer is preferably a metal layer, which extends into the support wafer, which ensures that, when the support wafer is removed, the conductive layer extends all the way over the sidewall of the semiconductor die. The method allows the simultaneous application of the conductive layer to many dies. The conductive layer reduces the resistance for currents in the radio frequency range flowing close to the edges of the die due to the skin effect.
申请公布号 DE60132990(T2) 申请公布日期 2009.02.19
申请号 DE2001632990T 申请日期 2001.04.25
申请人 INFINEON TECHNOLOGIES AG 发明人 ARNBORG, TORKEL;SMITH, ULF
分类号 B05D5/12;H01L21/30;B05D7/00;H01L21/02;H01L21/301;H01L21/31;H01L21/68;H01L21/78;H01L23/31 主分类号 B05D5/12
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