| 摘要 |
<p>Abstract Method for producing a semiconductor waferThe invention relates to a method for producing a semiconductor wafer, comprising pulling a single crystal (3) composed of semiconductor material from a melt (2), slicing a semiconductor wafer (9) from the single crystal (3) and polishing the semiconductor wafer (9), wherein the polishing is effected using a polishing pad containing fixedly bondedsolid materials with abrasive action, wherein a polishing agent supplied during the polishing contains no solidmaterials with abrasive action and has a pH value of between 9.5 and 12.5, and wherein, during the crystal growth, an edge region of the single crystal (3) is produced with great and spatially high-frequency fluctuation of the dopant concentration and a center region is produced with low and spatially low-frequency fluctuation of the dopant concentration.Fig. 3a</p> |
